Automation for thin films and epitaxial layer analysis

Characterization of thin-layered material

In new technologies thin layered materials have become increasingly important. You’ll find single or complex multi-layer strIn new technologies thin layered materials have become increasingly important. You’ll find single or complex multi-layer structures in all kinds of research and development areas, like semiconductors, magnetic multi-layers, coatings and optical applications. Thus, there is an ever-increasing interest in precise characterization methods for these layers. Measurements of parameters like layer thickness, interface roughness, layer density and the description of originated inter layers are important to analyze and to control development and production processes. X-ray diffraction (XRD) is a powerful non-destructive tool to characterize these thin layers. XRD methods are used to measure semiconductor wafer orientation and offcut using alignment methods and 2-axis scans.

It starts with the sample

Most contributions in the field of thin films relate to the measurements and the manual evaluation of the results. But there is more to thin layer characterization. Repeatability and cost dominate the decision-making around the results. With labor-inMost contributions in the field of thin films relate to the measurements and the evaluation of the results. But, there is more to thin layer characterization. For example, correct sample handling is an important part of the XRD measurement. To get accurate analytical results, you must carefully and correctly prepare, install and align the samples before you start the measurements. The sample positioning and height alignment will mostly be performed automatically, using an alignment camera in combination with a laser alignment tool.

Alignment

There’s another type of alignment that has a crucial impact on your results. This is not tube or sample alignment, or anything that can be done with a camera. It is high-resolution alignment of the sample and is peculiar to wafers. This step is really quite different to anything else that we do in XRD and often forgotten and left to inherited procedures.

It is important to set the sample so that the beam is incident at an angle close to (slightly larger than) the critical angle for reflection. The first step in the procedure to find this position. The 2θ zero position should be checked and calibrated by measuring the position of the straight-through beam (use an attenuator) with no sample present.

Nail the result

If you’d like to dive even deeper into the automation of analysis and its cost-saving potential, you can put your questions to the expert during the last Ask an Expert! webinar of 2021, on November 16th. In 20 minutes, we will discuss this crucial step before measurement. We will show examples and pitfalls to avoid in order to help you nail the alignment. The remaining 40 minutes we will answer your questions. Send us your questions in advance via askanexpert@malvernpanalytical.com or by using the #MPexpert hashtag on Twitter.

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